Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices
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- 26 August 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (9) , 1875-1877
- https://doi.org/10.1063/1.1605805
Abstract
Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium–tin–oxide substrates.Keywords
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