Core-level photoemission and the structure of the Si/SiO2 interface: A reappraisal
- 29 August 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (9) , 1097-1099
- https://doi.org/10.1063/1.112109
Abstract
Photoemission spectroscopy of spherosiloxane cluster derived Si/SiOx interfaces has allowed the direct assignment of observed spectral features to specific chemical moieties. The implications of these assignments for structural models of the Si/SiO2 interface are explored. Models specifically constructed to be consistent with photoemission data are shown to be incorrect after reanalysis of core‐level shifts based on the recently synthesized model systems. A new model for the Si/SiO2 interface is proposed which is consistent with the current understanding of photoemission for Si/SiOx interfaces as well as with results from numerous other experiments.Keywords
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