Determination of cesium distributions in oxides of MOS structures by photoinjection studies
- 1 August 1974
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 4 (3) , 217-223
- https://doi.org/10.1007/bf00884232
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Source materials for ion implantationApplied Physics Letters, 1973
- New developments in the surface analysis of solidsApplied Physics B Laser and Optics, 1973
- Distribution of Sodium in Sputtered SiO[sub 2] as Determined by Neutron Activation and U.V. Spectrographic AnalysesJournal of the Electrochemical Society, 1973
- Control of Positive Surface Charge in Si–SiO2 Interfaces by Use of Implanted Cs IonsApplied Physics Letters, 1971
- Photoinjection Studies of Charge Distributions in Oxides of MOS StructuresJournal of Applied Physics, 1971
- Photoinjection into SiO2: Electron Scattering in the Image Force Potential WellJournal of Applied Physics, 1971
- Studies of Sodium in SiO[sub 2] Films by Neutron Activation and Radiotracer TechniquesJournal of the Electrochemical Society, 1967
- An investigation of instability and charge motion in metal-silicon oxide-silicon structuresIEEE Transactions on Electron Devices, 1966
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- CXIX. A study of transparent, highly conducting gold filmsJournal of Computers in Education, 1955