MACROSCOPIC THEORY OF PULSED LASER ANNEALING
- 1 January 1980
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Laser Annealing of Ion-Implanted SemiconductorsScience, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978
- Some features of laser annealing of implanted silicon layersRadiation Effects, 1978
- Recombination in strongly excited siliconSolid State Communications, 1971
- Solute trapping by rapid solidificationActa Metallurgica, 1969
- Thermal Conductivity of Silicon from 300 to 1400°KPhysical Review B, 1963
- Diffusion Coefficients of Impurities in Silicon MeltJapanese Journal of Applied Physics, 1963
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960