Chapter 4 Single-Crystal Lead-Tin Chalcogenides
- 1 January 1970
- book chapter
- Published by Elsevier
- Vol. 5, 111-174
- https://doi.org/10.1016/s0080-8784(08)62815-x
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF LASER EMISSION IN Pb1−xSnxSeApplied Physics Letters, 1969
- LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERSApplied Physics Letters, 1968
- DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTeApplied Physics Letters, 1966
- PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODESApplied Physics Letters, 1966
- Reproducible preparation of Sn1−xPbxTe epitaxial films with moderate carrier concentrationsMaterials Science and Engineering, 1966
- Band Structure and Laser Action inPhysical Review Letters, 1966
- New Type of Negative Resistance in Barrier TunnelingPhysical Review Letters, 1966
- Optical energy gaps, lattice parameters and solubility limits of solid solutions of SnSe and GeSe in PbTe, and GeSe in SnTeBritish Journal of Applied Physics, 1965
- Energy Bands in PbTePhysical Review B, 1965
- Über Struktur und Eigenschaften der Halbmetalle. XIV. Mischkristallsysteme zwischen halbleitenden Chalkogeniden der vierten HauptgruppeZeitschrift für anorganische und allgemeine Chemie, 1961