Density of states of Pb1 Si/SiO2 interface trap centers
- 18 March 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (11) , 1945-1947
- https://doi.org/10.1063/1.1461053
Abstract
The electronic properties of the (100) Si/SiO 2 interfacial defect called P b1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the P b1 defects have levels in the silicon band gap, (2) that the P b1 correlation energy is significantly smaller than that of the P b1 defect, and (3) that the P b1 levels are skewed toward the lower part of the silicon band gap.Keywords
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