Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor
- 1 December 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 194 (3-4) , 286-291
- https://doi.org/10.1016/s0022-0248(98)00606-x
Abstract
No abstract availableKeywords
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