Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C
- 2 August 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 179 (3-4) , 382-390
- https://doi.org/10.1016/s0022-0248(97)00138-3
Abstract
No abstract availableKeywords
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