Integrated atomistic process and device simulation of decananometre MOSFETs
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variationsIEEE Transactions on Electron Devices, 2002
- Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation studyIEEE Transactions on Electron Devices, 2001
- Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation studyIEEE Transactions on Electron Devices, 1998
- Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomenaApplied Physics Letters, 1996