Optical properties of sulfur-doped silicon

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Abstract
Photocurrent measurements in sulfur‐doped silicon p‐n junctions have been used to determine optical threshold energies and spectral distributions of the photoionization cross sections associated with two deep sulfur centers in silicon. In addition, absolute values of three of the cross sections have been determined. It is shown that the optical cross‐section spectra for the excitation of electrons from the sulfur centers to the conduction band cannot be described by the Lucovsky model. On the other hand, they are not in contradiction with the Pantelides‐Sah correction of KL‐EMT. The temperature dependence of the energy position of the sulfur centers is discussed.