High temperature stressing of SiC JFETs at 300/spl deg/C
- 1 January 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Silicon carbide is an important emerging semiconductor technology for high power and high temperature applications. Although many papers in the literature report some of the characteristics and advantages of various SiC devices, very little information is available on the test and operation of these devices for an extended period of time. For our study a special lot of SiC JFETs was fabricated and packaged by CREE Research Inc. These devices were delivered to the Army Research Laboratory where they have been electrically characterized, radiation tested and, as reported here, subjected to thermal stress at 300/spl deg/C for 1000 hours under various bias conditions.<>Keywords
This publication has 7 references indexed in Scilit:
- Silicon carbide JFET radiation responseIEEE Transactions on Nuclear Science, 1992
- Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbideJournal of Applied Physics, 1992
- Recent developments in SiC single-crystal electronicsSemiconductor Science and Technology, 1992
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbideProceedings of the IEEE, 1991
- Hall measurements as a function of temperature on monocrystalline SiC thin filmsJournal of Applied Physics, 1990
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978