DLTS study of deep level defects in Cz n-Si due to heat treatment at 600 to 900 °C
- 16 September 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 109 (1) , 279-294
- https://doi.org/10.1002/pssa.2211090130
Abstract
No abstract availableKeywords
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