Effect of high oxygen doping on the minority carrier lifetime in heat-treated silicon crystals
- 1 April 1985
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 20 (4) , 485-489
- https://doi.org/10.1002/crat.2170200412
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Twenty five years of semiconductor-grade siliconPhysica Status Solidi (a), 1981
- Influence of oxygen on silicon resistivityJournal of Applied Physics, 1980
- Decay of excess carriers in thermally treated oxygen-doped siliconPhysica Status Solidi (a), 1980
- Silicon for electronic devicesJournal of Crystal Growth, 1980
- Minority carrier lifetime in annealed silicon crystals containing oxygenPhysica Status Solidi (a), 1978