Effect of Heat Treatment on the Minority Carrier Lifetime in Oxygen-Containing Silicon
- 16 October 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 79 (2) , K159-K163
- https://doi.org/10.1002/pssa.2210790253
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Structure and formation kinetics of oxygen-induced recombination centres in heat-treated siliconPhysica Status Solidi (a), 1982
- Effect of oxide precipitates on minority-carrier lifetime in Czochralski-grown siliconApplied Physics Letters, 1982
- Nucleation of oxygen precipitations and efficiency of internal gettering centres in Czochralski siliconPhysica Status Solidi (a), 1981
- Some aspects of the effect of heat treatment on the minority carrier diffusion length in low resistivity p-type siliconPhysica Status Solidi (a), 1981
- On the effect of high temperature heat treatment on the minority carrier lifetime in siliconPhysica Status Solidi (a), 1981
- Decay of excess carriers in thermally treated oxygen-doped siliconPhysica Status Solidi (a), 1980