Decay of excess carriers in thermally treated oxygen-doped silicon
- 16 April 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 58 (2) , 549-555
- https://doi.org/10.1002/pssa.2210580228
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
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- Degradation of carrier lifetime in silicon crystals at room temperaturePhysica Status Solidi (a), 1978
- The effect of swirl defects on the minority carrier lifetime in heat-treated silicon crystalsJournal of Physics D: Applied Physics, 1977
- The effects of heat treatment on dislocation-free oxygen-containing silicon crystalsJournal of Applied Physics, 1977
- Effect of quenching rate and annealing on the concentration of quenched-in recombination centres in heat treated siliconPhysica Status Solidi (a), 1976
- The role of impurities in the formation of quenched-in recombination centres in thermally treated siliconPhysica Status Solidi (a), 1976
- Solubility and origin of thermally induced recombination centres in n-type and p-type siliconPhysica Status Solidi (a), 1975
- Decay of excess carrier concentration in thermally treated siliconPhysica Status Solidi (a), 1973