Effect of quenching rate and annealing on the concentration of quenched-in recombination centres in heat treated silicon
- 16 June 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 35 (2) , K157-K160
- https://doi.org/10.1002/pssa.2210350262
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Quenched-in centers in silicon p+n junctionsSolid-State Electronics, 1974
- Thermally induced defects in n-type and p-type siliconPhysica Status Solidi (a), 1973
- Decay of excess carrier concentration in thermally treated siliconPhysica Status Solidi (a), 1973
- Recombination at iron atoms and at thermally generated lattice defects in n-siliconPhysica Status Solidi (a), 1972
- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Quenched-In Defects in p-Type SiliconJournal of Applied Physics, 1964