Gallium arsenide for laser window applications
- 1 February 1973
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 2 (1) , 47-70
- https://doi.org/10.1007/bf02658103
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Liquid encapsulated growth of GaP from non-stoichiometric meltsJournal of Crystal Growth, 1972
- Thermal Lensing in Infrared Laser Window MaterialsJournal of Applied Physics, 1972
- Optical Distortion by Heated Windows in High-Power Laser SystemsJournal of Applied Physics, 1971
- Preparation and properties of InAs1-xPx AlloysJournal of Physics and Chemistry of Solids, 1971
- A review of bulk and process-induced defects in GaAs semiconductorsMetallurgical Transactions, 1970
- Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystalsJournal of Physics and Chemistry of Solids, 1965
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964
- A Technique for Pulling Single Crystals of Volatile MaterialsJournal of Applied Physics, 1962
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961
- Notizen: Herstellung von InAs- und GaAs-EinkristallenZeitschrift für Naturforschung A, 1956