Gas-source molecular beam epitaxy growth of GaxIn1−xAsyP1−y lattice matched to GaAs
- 23 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (8) , 1128-1130
- https://doi.org/10.1063/1.109802
Abstract
Gas‐source molecular beam epitaxy growth of GaxIn1−xAsyP1−y layers lattice matched to GaAs is reported. X‐ray diffraction, photoluminescence, and Hall measurements show that the layers are of good quality. High‐quality GaAs/GaxIn1−xAsyP1−y heterojunction and (In)GaAs/GaxIn1−xAsyP1−y quantum well structures have also been prepared, as deduced from the device characteristics of heterojunction diodes and quantum well lasers.Keywords
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