Laser-induced chemical vapour deposition and characterization of amorphous silicon oxide films
- 1 February 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 157 (1) , 105-116
- https://doi.org/10.1016/0040-6090(88)90351-3
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Murata Science Foundation
This publication has 20 references indexed in Scilit:
- Production of silicon oxides from the glow discharge decomposition of silane and NO2Thin Solid Films, 1987
- On the role of carrier gas in the deposition kinetics of SiO2 films produced by low temperature chemical vapour depositionThin Solid Films, 1987
- Incorporation of oxygen into nanocrystalline siliconSolid State Communications, 1986
- SiO2 Film Deposition by KrF Excimer Laser IrradiationJapanese Journal of Applied Physics, 1986
- Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy filmsPhysical Review B, 1983
- An Infrared Absorption Study of LTCVD Silicon DioxideJournal of the Electrochemical Society, 1983
- Laser-induced chemical vapor deposition of SiO2Applied Physics Letters, 1982
- Characterization of Plasma‐Deposited Silicon DioxideJournal of the Electrochemical Society, 1981
- Deposition of Plasma Silicon Oxide Thin Films in a Production Planar ReactorJournal of the Electrochemical Society, 1979
- The deposition of thin films by the decomposition of tetra-ethoxy silane in a radio frequency glow dischargeThin Solid Films, 1972