Photoluminescence study of acceptors in silicon-doped gallium arsenide grown by metalorganic chemical vapor deposition
- 1 August 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (4) , 790-794
- https://doi.org/10.1016/0022-0248(89)90638-6
Abstract
No abstract availableKeywords
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