Planar doping by interrupted MOVPE growth of GaAs
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 15-20
- https://doi.org/10.1016/0022-0248(84)90390-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1983
- MOVPE Growth of Ga1-xAlxAs–GaAs Quantum Well HeterostructuresJapanese Journal of Applied Physics, 1982
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979
- Silicon Epitaxial Layers with Abrupt Interface Impurity ProfilesJournal of the Electrochemical Society, 1969