The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy
- 15 July 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (2) , 973-976
- https://doi.org/10.1063/1.349608
Abstract
The electrical and optical properties of AlGaAs grown by metalorganic molecular‐beam epitaxy using triethylaluminum, tri‐isobutylaluminum, and trimethylamine‐alane are compared. It is found that tri‐isobutylaluminum yields the lowest residual carbon incorporation in the layers (N a − N d = 4 × 1015 cm−3) and the highest electron and hole mobilities.Photoluminescence spectra for the higher‐quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.This publication has 19 references indexed in Scilit:
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