Thermopower measurements in p-GaSe single crystals parallel and perpendicular to the c-axis
- 1 August 1988
- journal article
- physical electronics
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 65 (2) , 215-221
- https://doi.org/10.1080/00207218808945218
Abstract
Thermopower measurements in p-GaSe single crystals have been carried out parallel and perpendicular to the c-axis in the temperature ranges 280-430 K and 250-330 K respectively. Bridgman-grown GaSe single crystals were used and found to be p-type. The room temperature values for α||c and α⊥c were observed to be the same and equal to 120 ± 13μV/degα||c and α⊥c increased with temperature over the range used, and a plot of α||c vs. 1/T exhibited a maximum at 435 K with α||c = 340 ± 20μV/deg.Keywords
This publication has 15 references indexed in Scilit:
- Electrical conduction in p-GaSeJournal of Physics D: Applied Physics, 1984
- X-ray and electron diffraction analysis of GaSe crystalsJournal of Materials Science Letters, 1983
- The growth of single crystals of GaSeJournal of Crystal Growth, 1981
- Conductivity and Hall mobility in GaSe single crystalsInternational Journal of Electronics, 1981
- Photoconduction in GaSe thin filmsInternational Journal of Electronics, 1981
- Détermination de la structure de bande de MoTe2-x à partir de l'étude de phénomènes de transportJournal de Physique, 1976
- Indirect Energy Gap in GaSe and GaSPhysica Status Solidi (b), 1969
- On heat conductivity of AIIIBVI-type semiconductorsPhysics Letters, 1966
- The general theory of van der Waals forcesAdvances in Physics, 1961
- The performance of bismuth telluride thermojunctionsBritish Journal of Applied Physics, 1958