Characterization of Lattice Sites and Compensation Mechanism in Heavily Si-Doped GaAs with Laser Raman Spectroscopy
- 1 February 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (2R)
- https://doi.org/10.1143/jjap.29.301
Abstract
Lattice sites in heavily Si-doped GaAs have been investigated by means of Raman spectroscopy. Localized vibrational modes (LVM) due to SiGa-VGa complex and SiGa were observed as well as SiGa-SiAs pair and SiAs modes. Raman scattering efficiency was obtained from the spectrum area of each mode. The concentrations of these four Si-related sites were estimated, and the results indicate that the carrier compensation mechanism after annealing is dominated by SiGa-VGa acceptors and/or SiGa-SiAs neutral pairs depending on the annealing conditions. The compensation mechanism of the as-grown sample and Si-implanted GaAs has also been studied.Keywords
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