A circuit design to suppress asymmetrical characteristics in high-density DRAM sense amplifiers
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 25 (1) , 36-41
- https://doi.org/10.1109/4.50281
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A circuit design to suppress asymmetrical characteristics in 16-Mbit DRAM sense amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1989
- A 16mb Dram with an Open Bit-Line ArchitecturePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- A new half-micrometer p-channel MOSFET with efficient punchthrough stopsIEEE Transactions on Electron Devices, 1986
- A new sense amplifier technique for VLSI dynamic RAM'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Optimization of the latching pulse for dynamic flip-flop sensorsIEEE Journal of Solid-State Circuits, 1974