Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1R) , 1-5
- https://doi.org/10.1143/jjap.33.1
Abstract
Defects introduced by 65 MeV proton irradiation into Czochralski-grown Si were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of isochronal annealing temperature. Divacancies introduced by the irradiation were found to migrate above 200° C and they formed stable vacancy-oxygen complexes such asV3On(n=1–3). These defects annealed out at ∼500° C. After the recovery of vacancy-oxygen complexes, oxygen clusters were found to be the predominant defect. The aggregation of the oxygen clusters started above 800° C.Keywords
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