Reduction of as carryover by PH3 overpressure in metalorganic vapor-phase epitaxy
- 1 August 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 179 (1-2) , 26-31
- https://doi.org/10.1016/s0022-0248(97)00096-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high-resolution x-ray diffractions and dynamical simulationsJournal of Applied Physics, 1993
- Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structuresApplied Physics Letters, 1993
- Study of interrupted MOVPE growth of InGaAs/InP superlatticeJournal of Crystal Growth, 1992
- Effects of hydrogen-only interrupts on InGaAs/InP superlattices grown by OMVPEJournal of Crystal Growth, 1992
- Interface control in GaAs/GaInP superlattices grown by OMCVDJournal of Crystal Growth, 1992
- Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPEJournal of Electronic Materials, 1992
- Evidence for intrinsic interfacial strain in lattice-matched As/InP heterostructuresPhysical Review B, 1991
- Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxyJournal of Applied Physics, 1989
- A study of layer composition of InGaAs/InP multiquantum wells grown by metalorganic chemical vapor deposition using double-crystal x-ray diffraction theory and experimentJournal of Applied Physics, 1988
- Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffractionJournal of Applied Physics, 1987