Oxygen ion implantation into both heavily doped n+- and p+-GaAs for isolation
- 1 July 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 59-60, 981-984
- https://doi.org/10.1016/0168-583x(91)95746-z
Abstract
No abstract availableKeywords
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