Schottky Contacts on n-InP Surface Treated by Plasma-Induced Oxygen Radicals

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Abstract
An Au/n-InP Schottky contact formation on an InP surface exposed to plasma-induced oxygen radicals and its electrical characteristics have been investigated. Auger electron spectroscopy (AES) measurements revealed the presence of oxygen atoms at the Au/InP interface, indicating an oxide-layer formation. The Schottky contacts showed an ideality factor n of about 1.06 and an enhanced barrier height φB0 of about 0.7 eV, quite stable for annealing temperatures up to about 300°C. We observed a large decrease in the reverse leakage current, three orders of magnitude smaller than that of conventional Au/n-InP contacts. A barrier-height increase of about 0.2 eV could be interpreted on the bases of an inter-facial-layer model.