Room-temperature operation of InAs quantum-dash lasers on InP [001]
- 1 August 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 13 (8) , 767-769
- https://doi.org/10.1109/68.935797
Abstract
The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm 2 for singlestack uncoated lasers, and a distinctly quantum-wire-like dependence of the threshold current on the laser cavity orientation. The maximal modal gains for lasing in the ground-state with the cavity perpendicular to the dash direction are determined to be 15 cm –1 for single-stack and 22 cm –1 for five-stack lasers.Keywords
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