Gas Source Molecular Beam Epitaxy of GaP Using PH3 Decomposed by Low Energy Electron Impact
- 1 December 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (12A) , L940
- https://doi.org/10.1143/jjap.25.l940
Abstract
A low energy electron impact method is proposed to decompose PH3 gas to a phosphorus beam in homoepitaxial growth of GaP. In this method the electrons emitted from a heated tungsten filament bombard PH3 molecules supplied into a cylindrical grid. The growth rate and morphology are studied by changing the electron energy to decompose PH3. The constant growth rate independent of the electron energy proves that the process is found to be Ga-limited growth.Keywords
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