Structural stability of silicon in tight-binding models
- 20 May 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (14) , L263-L269
- https://doi.org/10.1088/0022-3719/20/14/001
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Crystal Stability and Structural Transition Pressures of-Bonded SolidsPhysical Review Letters, 1986
- Energies and Structures of (111) Coincidence Twist Boundaries in 3C‐SiC, Diamond, and SiliconPhysica Status Solidi (b), 1986
- Atomic forces from electronic energies via the Hellmann-Feynman theorem, with application to semiconductor (110) surface relaxationPhysical Review B, 1986
- The structures of binary compounds. II. Theory of the pd-bonded AB compoundsJournal of Physics C: Solid State Physics, 1986
- Theoretical study of the atomic structure of silicon (211), (311), and (331) surfacesPhysical Review B, 1984
- Theory of the two-center bondPhysical Review B, 1983
- Trends in the cohesive properties of sp bonded elementsJournal de Physique, 1983
- The Recursive Solution of the Schrodinger EquationPublished by Elsevier ,1980
- Moments developments and their application to the electronic charge distribution of d bandsJournal of Physics and Chemistry of Solids, 1970
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954