Interface properties in fluorinated (100) and (111)Si/SiO2 MOSFETs
Open Access
- 31 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 97-100
- https://doi.org/10.1016/0167-9317(93)90139-v
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Lateral profiling of oxide charge and interface traps near MOSFET junctionsIEEE Transactions on Electron Devices, 1993
- Effect of radiation-induced interface traps on 1/f noise in MOSFET'sIEEE Transactions on Nuclear Science, 1992
- Metal–oxide–semiconductor gate oxide reliability and the role of fluorineJournal of Vacuum Science & Technology A, 1992
- Passivation of (111) Si/SiO2 interface by fluorineApplied Physics Letters, 1992
- Inversion layer mobility of MOSFETs with nitrided oxide gate dielectricsIEEE Transactions on Electron Devices, 1988
- Experimental derivation of the source and drain resistance of MOS transistorsIEEE Transactions on Electron Devices, 1980
- Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon SurfacesPhysical Review B, 1971
- Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO2 InterfaceJapanese Journal of Applied Physics, 1969
- Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon SurfacesJapanese Journal of Applied Physics, 1969