Structural characterization of tin doped indium oxide films prepared by magnetron sputtering
- 1 August 1985
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 20 (8) , 2937-2944
- https://doi.org/10.1007/bf00553058
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Transparent conductors—A status reviewThin Solid Films, 1983
- Tin-doped In2O3 films deposited by r.f. sputteringThin Solid Films, 1983
- Electrical and optical properties of In2O3: Sn films prepared by activated reactive evaporationThin Solid Films, 1980
- The effect of ambient atmosphere in the annealing of indium tin oxide filmsJournal of Applied Physics, 1980
- Preparation of In2O3 and tin-doped In2O3 films by a novel activated reactive evaporation techniqueThin Solid Films, 1980
- Properties of Sn-Doped Indium Oxide Prepared by High Rate and Low Temperature RF SputteringJapanese Journal of Applied Physics, 1978
- Properties of Sn‐Doped In2 O 3 Films Prepared by RF SputteringJournal of the Electrochemical Society, 1975
- Preparation and properties of reactively co-sputtered transparent conducting filmsThin Solid Films, 1975
- Étude par diffraction de rayons X de films à base d'oxydes d'étain et d'indiumThin Solid Films, 1973
- Highly Conductive, Transparent Films of Sputtered In[sub 2−x]Sn[sub x]O[sub 3−y]Journal of the Electrochemical Society, 1972