A Theoretical Investigation of Stable Lattice Sites for In Adatoms on GaAs(001)- (2×4) Surface

Publisher Website
Google Scholar
Abstract
Stable lattice sites of In adatoms on the GaAs(001)-(2×4)β2 surface are qualitatively investigated using empirical interatomic potential and an energy term as a function of the number of electrons remaining in the cation dangling bonds. The calculated results imply that the lattice sites in the missing dimer row are favorable for In adatoms on the GaAs(001)-(2×4)β2 surface, since the formation of Ga-In dimers suppresses the number of electrons remaining in the cation dangling bonds. Lattice sites in the missing dimer row near the B-type step edge are stable for an In adatom. This creates Schwoebel barriers at the B-type step edge. However, no preferential adsorption sites are found near A-type step edges. These results are comparable with the results on Ga adatoms we obtained in our previous study.