Doping-density dependence of scanning tunneling spectroscopy on lightly doped silicon
- 20 April 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (16) , 1993-1995
- https://doi.org/10.1063/1.121243
Abstract
The doping-density dependence of scanning tunneling spectroscopy on lightly doped hydrogen-terminated Si(100) (resistivities in the range of 0.2–12 Ω cm) was investigated in air with and without illumination. The observed doping-density dependence is consistent with a generation model in which the changes in the three-dimensional depletion region, induced by a scanning tunneling microscopy tip, contributes to changes in the concentration of thermally and/or photogenerated carriers in lightly doped samples. These results suggest that scanning tunneling spectroscopy can be used to image variations in dopant density in lightly doped samples.Keywords
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