Photoluminescence study of the shallow acceptor states in n-type GaAs
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 3882-3884
- https://doi.org/10.1063/1.322132
Abstract
The 4 °K photoluminescence spectra of vapor phase epitaxial GaAs (n) layers with doping levels from 1013 to 3×1016 cm−3 have been studied. Taking into account the shift of the donor‐acceptor (D‐A) transitions lines versus the neutral donor concentration, it is shown that five shallow acceptor states are involved; their binding energies are determined, and compared with results obtained in other laboratories. Besides carbon (Ea=27 meV), zinc (31 meV), silicon (35 meV), and germanium (41 meV), there appears an acceptor level at 22 meV which had not previously been observed.This publication has 13 references indexed in Scilit:
- Photocapacitance studies in high-purity GaAsPhysica Status Solidi (a), 1974
- Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAsJapanese Journal of Applied Physics, 1974
- Doping and Energy Levels of Si and Ge in GaAs Grown from Vapour PhaseJapanese Journal of Applied Physics, 1973
- Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAsJapanese Journal of Applied Physics, 1973
- Photoluminescence of GaAs Grown by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1972
- Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAsJournal of the Electrochemical Society, 1971
- Acceptor Luminescence in High-Purity-Type GaAsPhysical Review Letters, 1970
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- Donor-Acceptor Pair Recombination Involving the First Excited State of a Donor in GaAsPhysical Review B, 1968
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968