Electrical Properties of the Interface Region of the Ge-Si Alloyed Heterojunction

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Abstract
The interface transition region of the n-n germanium-silicon heterojunction is studied to determine its electrical properties and its width as a function of fabrication process variations. Ohmic contacts are made to the p-type transition region while p-n junction isolation is maintained to the n-type bulk materials. Electrical measurements of the transition region determine conductivity and Hall coefficient over the temperature range from 77° to 273°K. Capacitance data are obtained between the transition p-layer and the n-type germanium over the same temperature range. These measurements permit determination of activation energies of the interface states within the transition region, the carrier concentration, and the carrier Hall mobility. Transition widths are shown to be of the order of microns, are shown to increase with increased interdiffusion times, and decrease with slower recrystallization rates. Data suggest a nonabrupt transition from germanium to silicon in the alloyed heterojunction.

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