Interface-controlled Si/SiGe-heterostructure growth and its device application
- 1 May 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (3) , 1724-1727
- https://doi.org/10.1116/1.591461
Abstract
Si/SiGe heterostructures were grown by molecular-beam epitaxy. With atomic-hydrogen irradiation during the growth of the heterostructure, characteristics of modulation-doped field-effect transistors (MODFETs) were improved. A Hall effect measurement and a device simulation revealed that carrier density capable of being confined in the Si channel is limited in the MODFETs. Surface-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with strained-Si channel on various buffer layers were fabricated. Effective electron mobility in strained-Si MOSFETs with a SiGe compositionally graded buffer layer was 60% higher than that of an unstrained-Si MOSFET. The enhancement of mobility varied with the types of the buffer layers. This variation may be attributed to the amplitude of surface roughness of the strained-Si layer.Keywords
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