Room-Temperature Observation of Excitonic Absorption in GaxIn1-xAs/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5B) , L885
- https://doi.org/10.1143/jjap.30.l885
Abstract
Ga x In1-x As/InP (0.2≤x≤0.47) lattice-matched and strained quantum wells having 10 wells were grown by chemical beam epitaxy (CBE). The absorption properties were investigated and excitonic absorption peaks were clearly observed at room temperature. The wavelengths of excitonic peaks were in good agreement with a theoretical estimation obtained by using effective mass approximation including heavy and light hole energy split at the Γ point.Keywords
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