GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2B) , L228
- https://doi.org/10.1143/jjap.30.l228
Abstract
Ga x In1-x As/InP (0.2≤x≤0.47) quantum wells were grown by chemical beam epitaxy. The thinnest well of two monolayers was obtained and confirmed by transmission electron microscope. Room temperature photoluminescence emission was observed from two-monolayer quantum wells which peaked at 1.0 µm. Strained quantum wells were grown with successive well thickness from 9 Å to 60 Å. By optimizing the growth sequence, we obtained a photoluminescence linewidth of 15 meV from 20 Å to 60 Å wells at 77 K.Keywords
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