Magnetic field investigations of resonant tunnelling devices grown by MOCVD
- 1 January 1989
- journal article
- research article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 6 (2) , 193-197
- https://doi.org/10.1016/0749-6036(89)90121-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Electron tunnelling into interfacial Landau states in single barrier N-type (InGa)As/InP/(InGa)As heterostructuresSolid-State Electronics, 1988
- Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)AsSolid-State Electronics, 1988
- Resonant tunnelling in AlInas/GaInAs double barrier diodes grown by MOCVDElectronics Letters, 1988
- Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devicesApplied Physics Letters, 1988
- Comment on ‘‘Observation of intrinsic bistability in resonant-tunneling structures’’Physical Review Letters, 1987