Observation of subbands in the GaAlAs on two-dimensional electron gas field-effect transistor structures
- 4 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (1) , 33-35
- https://doi.org/10.1063/1.99308
Abstract
We have measured the current-voltage characteristics and its derivatives on GaAs-GaAlAs field-effect transistor samples having a semitransparent Au-Schottky gate contact, varying the band structure by illumination. In these samples electrons tunnel from the two-dimensional electron gas through the GaAlAs into a Schottky gate. Sharp peaks are observed in dI/dV after illumination at liquid-helium temperature. Using a self-consistent model, we are able to explain these peaks by resonant tunneling via subband states in the GaAlAs.Keywords
This publication has 9 references indexed in Scilit:
- Analytical models for AlGaAs/GaAs heterojunction quantum wellsSolid-State Electronics, 1987
- Fowler–Nordheim tunneling and conduction-band discontinuity in GaAs/GaAlAs high electron mobility transistor structuresApplied Physics Letters, 1987
- Calculation of transmission tunneling current across arbitrary potential barriersJournal of Applied Physics, 1987
- Self-consistent analysis of resonant tunneling currentApplied Physics Letters, 1986
- Exact solution of the Schrodinger equation across an arbitrary one-dimensional piecewise-linear potential barrierJournal of Applied Physics, 1986
- Electron energy levels in GaAs-heterojunctionsPhysical Review B, 1984
- Subbands and charge control in a two-dimensional electron gas field-effect transistorApplied Physics Letters, 1984
- Subbands in back-gated heterojunctionsSolid State Communications, 1983
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982