Study of Shallow p+n Junction Formation Using SiGe/Si System
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12S)
- https://doi.org/10.1143/jjap.32.6163
Abstract
The fabrication of p+n shallow junctions using strained grown SiGe/Si heterostructure was studied. Because of the lower chemical potential of B in SiGe, the effective diffusion constant of B reduces in the SiGe/Si interface region when B diffuses from the SiGe layer to the Si layer. We have proposed a new method for shallow junction formation using this phenomenon and have shown that the profile of implanted B in SiGe/Si system is kept shallow by thermal treatment compared to that in Si.Keywords
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