Electron Spin Resonance Study of Boron Doped a-SiNx:H (x=0.07)
- 1 July 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (7A) , L522
- https://doi.org/10.1143/jjap.24.l522
Abstract
The electron spin resonance (ESR) has been measured on boron doped a-SiN x :H (x=0.07). It is found that the spin density of neutral silicon dangling bonds in a-SiN x :H (x=0.07) decreases as the Fermi level shifts toward the mid gap by doping boron. This decrease of spin density is considered mainly due to the decrease of the dangling bond density by chemical or electrical compensation of four-fold coordinated nitrogen and boron.Keywords
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