Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ Gravimetric Monitoring
- 1 April 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (4B) , L613
- https://doi.org/10.1143/jjap.33.l613
Abstract
Atomic layer epitaxy (ALE) using a GaCl source is investigated by a real-time in situ gravimetric monitoring method. An ALE system with an electrobalance is used as a monitoring system. The direct gravimetric information from the growing surface in the growth system of ALE is monitored during an ALE cycle. It is shown that the surface chemical species are one-monolayer Ga atoms during H2 purge after GaCl supply, and the in situ gravimetric method is a powerful tool for the investigation of the ALE growth mechanism.Keywords
This publication has 7 references indexed in Scilit:
- In Situ Observation of Halogen-Transport Atomic Layer Epitaxy of GaAs in Inert Carrier Gas SystemJapanese Journal of Applied Physics, 1993
- In situ optical characterization of GaAs surfaces under alternating supply of GaCl and AsH3Applied Physics Letters, 1992
- In Situ Gravimetric Monitoring of the GaAs Growth Process in Atomic Layer EpitaxyJapanese Journal of Applied Physics, 1991
- In Situ Monitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption MethodJapanese Journal of Applied Physics, 1991
- Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption MethodJapanese Journal of Applied Physics, 1990
- Optical Investigation on the Growth Process of GaAs during Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1989
- Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)Physical Review Letters, 1987