In Situ Monitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method
- 1 October 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (10A) , L1712
- https://doi.org/10.1143/jjap.30.l1712
Abstract
The epitaxial growth reactions that proceed on the substrate surface during halogen transport atomic layer epitaxy (ALE) are observed directly with a surface photo-absorption method. The heat of desorption (48.5 kcal/mol) is obtained from the reflective intensity change. The value agrees well with the activation energy reported in classical halogen transport vapor-phase epitaxy. Based on the observation, a reaction mechanism is proposed. The self-limiting mechanism of halogen transport ALE is ascribed to the complete coverage of surface As sites by the adsorbed complex.Keywords
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