Modeling of chemical vapor deposition: I. General considerations
- 31 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 60 (2) , 286-296
- https://doi.org/10.1016/0022-0248(82)90101-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Heterogeneous kinetics and mass transport in chemical vapour deposition processes: Part II application to silicon epitaxyProgress in Crystal Growth and Characterization, 1981
- Heterogeneous kinetics and mass transport in chemical vapour deposition processes: Part I theoretical discussionProgress in Crystal Growth and Characterization, 1981
- Theoretical analysis of equilibrium adsorption layers in CVD systems (Si-H-Cl, Ga-As-H-Cl)Journal of Crystal Growth, 1978
- Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradientJournal of Crystal Growth, 1975
- Coverage effects on the BCF surface diffusion modelJournal of Crystal Growth, 1974
- Growth Mechanism for Germanium Deposition near a SiO[sub 2]-Ge BoundaryJournal of the Electrochemical Society, 1972
- The Theory of Absolute Reaction Rates in SolutionBerichte der Bunsengesellschaft für physikalische Chemie, 1963