Organometallic chemistry related to applications for microelectronics in Japan
- 1 July 1991
- journal article
- review article
- Published by Wiley in Applied Organometallic Chemistry
- Vol. 5 (4) , 207-219
- https://doi.org/10.1002/aoc.590050403
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Extremely low threshold InGaAsP/InP DFB laser by MOCVD/LPE hybrid processJournal of Crystal Growth, 1988
- Residual impurities in epitaxial layers grown by MOVPEJournal of Crystal Growth, 1988
- Photovoltaic and Catalytic Activity of Plasma-Polymerized Phthalocyanine FilmsJournal of Macromolecular Science: Part A - Chemistry, 1987
- Low resistivity Al-doped ZnS grown by MOVPEJournal of Crystal Growth, 1986
- Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpeJournal of Crystal Growth, 1985
- Growth temperature dependence of crystallographic and luminescent properties of ZnSxSe1−x (0 ⪕ x ⪕ 1) by low-pressure MOVPEJournal of Crystal Growth, 1984
- Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAsJournal of Crystal Growth, 1984
- Laser-induced deposition of silicon filmsThin Solid Films, 1983
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of DisilaneJapanese Journal of Applied Physics, 1983
- The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structuresJournal of Crystal Growth, 1981