Deposition rate and structural properties of microcrystalline glow discharge Si:H, Cl films
- 1 August 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 106 (3) , 145-152
- https://doi.org/10.1016/0040-6090(83)90475-3
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Diagnostics and decomposition mechanism in radio-frequency discharges of fluorocarbons utilized for plasma etching or polymerizationPlasma Chemistry and Plasma Processing, 1982
- A thermodynamic criterion of the crystalline-to-amorphous transition in siliconPhilosophical Magazine Part B, 1982
- Structural and some other properties of silicon deposited in an SiCl4H2 r.f. dischargeThin Solid Films, 1982
- Optical constants of silicon films deposited by the r.f. glow discharge of SiCl4Thin Solid Films, 1981
- Characterization and luminescence of a-Si:H:Cl filmsJournal of Non-Crystalline Solids, 1981
- Structural properties of silicon thin films deposited by flow dischargeJournal of Physics D: Applied Physics, 1981
- Physical characterization of halogenated and hydrogenated amorphous silicon filmsThin Solid Films, 1980
- R.f. plasma deposition of amorphous silicon films from SiCl4-H2Thin Solid Films, 1980
- A heat-resisting new amorphous siliconApplied Physics Letters, 1980
- Electrical and optical properties of amorphous Si:F:H alloysPhilosophical Magazine Part B, 1979